參數(shù)資料
型號: IS62LV5128LL-70BI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
中文描述: 512K X 8 STANDARD SRAM, 70 ns, PBGA36
封裝: 8 X 10 MM, MINI, BGA-36
文件頁數(shù): 3/10頁
文件大?。?/td> 61K
代理商: IS62LV5128LL-70BI
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. D
05/04/01
3
IS62LV5128LL
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
CC
T
BIAS
T
STG
P
T
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
V
V
°
C
°
C
W
0.5 to Vcc + 0.3
0.3 to +3.3
40 to +85
65 to +150
1
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
V
CC
= 3.0V, I
OH
=
1.0 mA
V
CC
= 3.0V, I
OL
= 2.1 mA
2.2
2.2
0.2
1
1
0.4
V
V
V
V
μA
μA
V
CC
+ 0.3
0.4
1
1
GND
V
IN
V
CC
GND
V
OUT
V
CC
, O
UTPUTS
Disabled
Note:
1. V
IL
=
2.0V for pulse width less than 10 ns.
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