- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377570 > IS62LV5128LL-70BI (INTEGRATED SILICON SOLUTION INC) 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS62LV5128LL-70BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 70 ns, PBGA36 |
| 封裝： | 8 X 10 MM, MINI, BGA-36 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 61K |
| 代理商： | IS62LV5128LL-70BI |
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. D
05/04/01
7
IS62LV5128LL
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range, Standard and Low Power)
-70
-85
Symbol
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Notes:
1.
Test conditions assume signal transition times of 5 ns or ess, timing reference evels of 1.5V, nput pulse evels of 0.4V to 2.2V and output oading specified n Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3.
The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the
Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
Parameter
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
70
—
85
—
ns
CE
to Write End
65
—
70
—
ns
Address Setup Time to Write End
65
—
70
—
ns
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
WE
Pulse Width
60
—
60
—
ns
Data Setup to Write End
30
—
35
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
33
—
35
ns
WE
HIGH to Low-Z Output
5
—
5
—
ns
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCE
t
AW
t
HA
t
PWE
(4)
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CE
WE
DOUT
DIN
AC WAVEFORMS
WRITE CYCLE NO. 1
(
CE
Controlled,
OE
= HIGH or LOW)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62LV5128LL-85B | 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV5128LL-85BI | 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV5128LL | 512K x 8 Low Power And Low Vcc CMOS Static RAM(512K x 8 低功耗和低Vcc CMOS靜態(tài)RAM) |
| IS62U6416LL | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20B | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62LV5128LL-85B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV5128LL-85BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV6416LL-15K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV6416LL-15KI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV6416LL-15T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。