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參數(shù)資料
| 型號： | IS62U6416LL-20BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 200 ns, PBGA48 |
| 封裝： | MINI, BGA-48 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 93K |
| 代理商： | IS62U6416LL-20BI |
IS62U6416LL
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
SR034-0C
12/09/98
ISSI
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
1.8V (Min.) to 2.7V (Max.)
1.8V (Min.) to 2.7V (Max.)
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range Unless Otherwise Specified)
-200
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
CE
= V
IH
Com.
Ind.
—
—
25
40
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
0.3
0.3
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
5
5
μ
A
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency; f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range Unless Otherwise Specified)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –0.44 mA
1.6
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 0.33 mA
—
0.4
V
V
IH
V
IL(1)
Input HIGH Voltage
1.6
V
CC
+ 0.2
V
Input LOW Voltage
–0.2
0.4
V
μ
A
μ
A
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
–1
1
I
LO
Output Leakage
–1
1
Note:
1. V
IL
(min.) = –1.5V for pulse width less than 30 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
V
TERM
Terminal Voltage with Respect to GND
T
STG
Storage Temperature
P
T
Power Dissipation
I
OUT
DC Output Current (LOW)
Value
Unit
V
°
C
W
mA
–0.5 to Vcc +0.5
–65 to +150
1.5
20
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sec-
tions of this specification is not im-
plied. Exposure to absolute maximum
rating conditions for extended periods
may affect reliability.
相關(guān)PDF資料 |
PDF描述 |
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| IS62U6416LL-20K | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20KI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20T | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20TI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62V6416BLL | 64K x 16 Low Voltage, Ultra Low Power CMOS SRAM(64K x 16 低壓，極低功耗CMOS靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62U6416LL-20K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62VV25616L | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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