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參數(shù)資料
| 型號(hào)： | IS62WV10248BLL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 100萬× 8低電壓，超低功耗的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | IS62WV10248BLL |
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/17/06
IS62WV10248BLL
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
55 ns
70 ns
Symbol
t
WC
t
SCS1/
t
SCS2
CS1/
CS2 to Write End
t
AW
Address Setup Time to Write End
t
HA
Address Hold from Write End
t
SA
Address Setup Time
t
PWE
(4)
WE
Pulse Width
t
SD
Data Setup to Write End
t
HD
Data Hold from Write End
t
HZWE
(3)
WE
LOW to High-Z Output
t
LZWE
(3)
WE
HIGH to Low-Z Output
Parameter
Write Cycle Time
Min.
55
Max.
—
Min.
70
Max.
—
Unit
ns
45
45
—
—
60
60
—
—
ns
ns
0
0
—
—
0
0
—
—
ns
ns
40
25
0
—
5
—
—
—
25
—
50
30
0
—
5
—
—
—
25
—
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to V
DD
-
0.3V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CS1
LOW, CS2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write
.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4. t
PWE
> t
HZWE
+ t
SD
when
OE
is LOW.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
CS1
/CS2 Controlled,
OE
= HIGH or LOW
)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
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相關(guān)代理商/技術(shù)參數(shù) |
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| IS62WV10248BLL-55BI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mbx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV10248BLL-55BI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mbx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV10248BLL-55BLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mbx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV10248BLL-55BLI(U880A) | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV10248BLL-55BLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 1Mbx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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