參數(shù)資料
型號(hào): IS62WV12816BLL-55T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
中文描述: 128K X 16 STANDARD SRAM, 55 ns, PDSO44
封裝: 0.400 INCH, TSOP2-44
文件頁(yè)數(shù): 5/17頁(yè)
文件大小: 112K
代理商: IS62WV12816BLL-55T
IS62WV12816ALL, IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05
5
IS62WV12816ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
70
15
20
3
3
0.3
0.3
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
Com.
Ind.
Com.
Ind.
Com.
Ind.
mA
I
CC
1
mA
I
SB
1
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
V
DD
– 0.2V,
CS2
0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
5
10
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
IS62WV12816BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
45
35
40
25
3
3
0.3
0.3
Max.
55
25
30
20
3
3
0.3
0.3
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
mA
I
CC
1
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
mA
I
SB
1
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
V
DD
– 0.2V,
CS2
0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
typ.
(2)
10
10
3
10
10
3
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.0V, T
A
= 25
o
C and not 100% tested.
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IS62WV12816BLL-55TI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-55TI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-55TLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-55TLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 128Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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