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參數(shù)資料
| 型號： | IS62WV12816BLL-55TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 55 ns, PDSO44 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 9/17頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IS62WV12816BLL-55TLI |
IS62WV12816ALL, IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05
9
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
45ns
55 ns
70 ns
Symbol
t
WC
t
SCS1/
t
SCS2
CS1/
CS2 to Write End
t
AW
Address Setup Time to Write End
t
HA
Address Hold from Write End
t
SA
Address Setup Time
t
PWB
LB
,
UB
Valid to End of Write
t
PWE
WE
Pulse Width
t
SD
Data Setup to Write End
t
HD
Data Hold from Write End
t
HZWE
(3)
WE
LOW to High-Z Output
t
LZWE
(3)
WE
HIGH to Low-Z Output
Parameter
Write Cycle Time
Min.
45
35
35
0
0
35
35
20
0
—
5
Max.
—
—
—
—
—
—
—
—
—
20
—
Min.
55
45
45
0
0
45
40
25
0
—
5
Max.
—
—
—
—
—
—
—
—
—
20
—
Min.
70
60
60
0
0
60
50
30
0
—
5
Max.
—
—
—
—
—
—
—
—
—
20
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V
and output loading specified in Figure 1.
2.
The internal write time is defined by the overlap of
CS1
LOW, CS2 HIGH and
UB
or
LB
, and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to
terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
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| IS62WV12816ALL-70B2I | Circular Connector; No. of Contacts:6; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| IS62WV12816ALL-70BI | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816ALL-70T | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816ALL-70TI | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816BLL-45B | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV12816BLL-55TLI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV12816BLL-55T-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV12816DALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816DALL-55BLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV12816DBLL-45BLI | 功能描述:靜態(tài)隨機存取存儲器 2Mb A128K x 1645ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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