參數資料
型號： IS62WV12816BLL-45B
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
中文描述： 128K X 16 STANDARD SRAM, 45 ns, PBGA48
封裝： 6 X 8 MM, MO-207, MINI, BGA-48
文件頁數： 1/17頁
文件大?。?/td> 112K
代理商： IS62WV12816BLL-45B
IS62WV12816ALL
IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05
1
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
128K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns, 70ns
CMOS low power operation
– 36 mW (typical) operating
– 9 μW (typical) CMOS standby
TTL compatible interface levels
Single power supply
– 1.65V--2.2V V
DD
(62WV12816ALL)
– 2.5V--3.6V V
DD
(62WV12816BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
2CS Option Available
Lead-free available
DESCRIPTION
The
ISSI
IS62WV12816ALL/ IS62WV12816BLL are high-
speed, 2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (
LB)
access.
The IS62WV12816ALL and IS62WV12816BLL are packaged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
JUNE 2005
A0-A16
CS1
OE
WE
UB
LB
128K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
相關PDF資料
PDF描述
IS62WV12816BLL-45B2 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288BLL-45QI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL-70BI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL-70HI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
相關代理商/技術參數
參數描述
IS62WV12816BLL-45B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL-45TLI 功能描述:靜態(tài)隨機存取存儲器 2Mb 128K x 16 45ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-45TLI-TR 功能描述:靜態(tài)隨機存取存儲器 2Mb 128K x 16 45ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV12816BLL-55B2I 制造商:Integrated Silicon Solution Inc 功能描述:
IS62WV12816BLL-55B2LI 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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