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參數(shù)資料
| 型號(hào)： | IS62WV6416BLL-45B |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 45 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁(yè)數(shù)： | 10/17頁(yè) |
| 文件大小： | 116K |
| 代理商： | IS62WV6416BLL-45B |
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10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/05
IS62WV6416ALL, IS62WV6416BLL
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CS1
, CS2 and
WE
inputs and at
least one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CS1
) [ (
LB
) = (
UB
) ] (
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(
CS1
Controlled,
OE
= HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
LB
,
UB
t
PWB
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
45ns 55 ns
Min.
Max.
45
—
35
—
35
—
0
—
0
—
35
—
35
—
20
—
0
—
—
20
5
—
Symbol
t
WC
t
SCS1/
t
SCS2
t
AW
t
HA
t
SA
t
PWB
t
PWE
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Parameter
Write Cycle Time
CS1/
CS2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
LB
,
UB
Valid to End of Write
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
WE
LOW to High-Z Output
WE
HIGH to Low-Z Output
Min.
55
45
45
0
0
45
40
25
0
—
5
Max.
—
—
—
—
—
—
—
—
—
20
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V to
V
DD
-0.2V/V
DD
-0.3V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CS1
LOW, CS2 HIGH and
UB
or
LB
, and
WE
LOW. All signals must be in
valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are
referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
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| IS62WV6416BLL-45BI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45T | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45TI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55B2I | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55BI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV6416BLL-45BI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45BLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV6416BLL-45T | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45TI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55B2I | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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