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| 型號： | IS62WV6416BLL-45B |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 45 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 116K |
| 代理商： | IS62WV6416BLL-45B |
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/05
IS62WV6416ALL, IS62WV6416BLL
ISSI
IS62WV6416ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
55
10
10
6
5
5
1.2
1.2
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(1)
Com.
Ind.
Com.
Ind.
mA
I
CC
1
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
mA
I
SB
1
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
typ.
(1)
10
10
4
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
Note:
1. Typical values are measured at V
DD
=1.8V, T
A
=25
o
C. Not 100% tested.
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| IS62WV6416BLL-45TI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV6416BLL-45BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45BLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV6416BLL-45T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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