參數(shù)資料
型號: IS63LV1024L-10KLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
中文描述: 128K X 8 STANDARD SRAM, 10 ns, PDSO32
封裝: 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-32
文件頁數(shù): 17/18頁
文件大?。?/td> 323K
代理商: IS63LV1024L-10KLI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
01/15/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
PACKAGING INFORMATION
Mini Ball Grid Array
Package Code: B (36-pin)
Notes:
1. Controlling dimensions are in millimeters.
mBGA - 6mm x 8mm
MILLIMETERS
INCHES
Sym.
Min. Typ. Max.
Min. Typ. Max.
N0.
Leads
36
36
A
1.20
0.047
A1
0.24
0.30
0.009
0.012
A2
0.60
0.024
D
7.90
8.00
8.10
0.311 0.315 0.319
D1
5.25BSC
0.207BSC
E
5.90
6.00
6.10
0.232 0.236 0.240
E1
3.75BSC
0.148BSC
e
0.75BSC
0.030BSC
b
0.30
0.35
0.40
0.012 0.014 0.016
mBGA - 8mm x 10mm
MILLIMETER
INCHES
Sym.
Min. Typ. Max.
Min. Typ. Max.
N0.
Leads
36
36
A
1.20
0.047
A1
0.24
0.30
0.009
0.012
A2
0.60
0.024
D
9.90 10.00 10.10
0.390 0.394 0.398
D1
5.25BSC
.207BSC
E
7.90
8.00
8.10
0.311 0.315 0.319
E1
3.75BSC
0.148BSC
e
0.75BSC
0.030BSC
b
0.30
0.35
0.40
0.012 0.014 0.016
SEATING PLANE
A
A1
A2
A
B
C
D
E
F
G
H
e
e
D1
E1
E
D
φ
b (36x)
Top View
Bottom View
6 5 4 3 2 1
1 2 3 4 5 6
A
B
C
D
E
F
G
H
相關(guān)PDF資料
PDF描述
IS63LV1024L-10TL 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10TLI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12BLI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12JL 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10K 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS63LV1024L-10KLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 10ns 3.3v Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-10T 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-10TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10TL 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 10ns 3.3v Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-10TLI 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray