參數(shù)資料
型號(hào)： IS64LV25616AL-10TA1
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述： 256K X 16 STANDARD SRAM, 10 ns, PDSO44
封裝： PLASTIC, TSOP2-44
文件頁(yè)數(shù)： 8/14頁(yè)
文件大?。?/td> 131K
代理商： IS64LV25616AL-10TA1
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
IS64LV25616AL
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10
-12
Symbol
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PBW
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Parameter
Min. Max.
Min. Max.
Unit
Write Cycle Time
CE
to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
LB
,
UB
Valid to End of Write
WE
Pulse Width
WE
Pulse Width (
OE
= LOW)
Data Setup to Write End
Data Hold from Write End
WE
LOW to High-Z Output
WE
HIGH to Low-Z Output
10
9
8
0
0
8
8
10
6
0
—
2
—
—
—
—
—
—
—
—
—
—
5
—
12
10
8
0
0
8
8
10
6
0
—
2
—
—
—
—
—
—
—
—
—
—
6
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
相關(guān)PDF資料
PDF描述
IS64LV25616AL-12BA2 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12BA3 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12BLA3 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12TA2 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12TA3 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS64LV25616AL-12BA2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12BA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LV25616AL-12BA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LV25616AL-12BLA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LV25616AL-12BLA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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