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參數(shù)資料
| 型號： | IS64LV25616AL-12BA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 12 ns, PBGA48 |
| 封裝： | 8 X 10 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IS64LV25616AL-12BA3 |
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
IS64LV25616AL
ISSI
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
BA
t
HZB
(2)
t
LZB
(2)
t
PU
t
PD
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
LB
,
UB
Access Time
LB
,
UB
to High-Z Output
LB
,
UB
to Low-Z Output
Power Up Time
Power Down Time
Min. Max.
10
—
2
—
—
—
0
0
3
—
0
0
0
—
Min. Max.
12
—
2
—
—
—
0
0
3
—
0
0
0
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—
10
—
10
4
4
—
4
—
4
3
—
—
10
—
12
—
12
5
5
—
6
—
5
4
—
—
12
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 1
Figure 2
319
Ω
5 pF
Including
jig and
scope
353
Ω
OUTPUT
3.3V
319
Ω
30 pF
Including
jig and
scope
353
Ω
OUTPUT
3.3V
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| IS64LV25616AL-12BLA3 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TA2 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TA3 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TLA2 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TLA3 | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64LV25616AL-12BA3-TR | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 12ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12BLA3 | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 12ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12BLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 12ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12TA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV25616AL-12TA3 | 功能描述:靜態(tài)隨機存取存儲器 4Mb 256Kx16 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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