參數(shù)資料
型號: IS64WV102416BLL
廠商: Integrated Silicon Solution, Inc.
英文描述: 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 100萬× 16 HIGH-SPEED異步的CMOS靜態(tài)RAM為3.3V電源
文件頁數(shù): 10/21頁
文件大?。?/td> 134K
代理商: IS64WV102416BLL
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-20 ns
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
BA
t
HZB
t
LZB
Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
V
DD
-0.3V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Parameter
Min.
Max.
Unit
Read Cycle Time
20
ns
Address Access Time
20
ns
Output Hold Time
2.5
ns
CE
Access Time
20
ns
OE
Access Time
8
ns
OE
to High-Z Output
0
8
ns
OE
to Low-Z Output
0
ns
CE
to High-Z Output
0
8
ns
CE
to Low-Z Output
3
ns
LB
,
UB
Access Time
8
ns
LB
,
UB
to High-Z Output
0
8
ns
LB
,
UB
to Low-Z Output
0
ns
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IS64WV102416BLL-10MA3 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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