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參數(shù)資料
| 型號： | IS64WV12816BLL-15BA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 15 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大小： | 126K |
| 代理商： | IS64WV12816BLL-15BA3 |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
02/03/06
ISSI
IS61WV12816BLL
IS64WV12816BLL
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
Industrial
–40°C to +85°C
Automotive
–40°C to +125°C
V
DD
(15 n
S
)
2.5V-3.6V
2.5V-3.6V
V
DD
(12 n
S
)
3.3V + 10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
T
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.5 to 4.0V
–0.5 to V
DD
+ 0.5
–65 to + 150
1.0
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 1.0 mA
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
DD
+ 0.3
0.4
1
1
Unit
V
V
V
V
μA
μA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
μA
μA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64WV12816BLL-15TA3 | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64WV12816BLL-15TLA3 | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 15ns 44-Pin TSOP-II |
| IS64WV12816BLL-15TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 2Mb 128Kx16 15ns 2.5V-3.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV12816DBLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV12816DBLL/DBLS | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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