參數(shù)資料
型號: IS64WV3216BLL-15TA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 32K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 32K X 16 STANDARD SRAM, 15 ns, PDSO44
封裝: PLASTIC, TSOP2-44
文件頁數(shù): 4/16頁
文件大小: 104K
代理商: IS64WV3216BLL-15TA3
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
ISSI
IS64WV3216BLL
IS61WV3216BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –1.0 mA
2.3
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
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