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參數(shù)資料
| 型號： | IS64WV3216BLL-15TA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | IS64WV3216BLL-15TA3 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
9
ISSI
IS64WV3216BLL
IS61WV3216BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
-12 ns
Min.
-15 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Max.
Max.
Unit
Write Cycle Time
12
—
15
—
ns
CE
to Write End
9
—
10
—
ns
Address Setup Time
to Write End
9
—
10
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
LB
,
UB
Valid to End of Write
9
—
10
—
ns
WE
Pulse Width (
OE
= HIGH)
9
—
10
—
ns
WE
Pulse Width (
OE
= LOW)
11
—
12
—
ns
Data Setup to Write End
9
—
9
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
6
—
7
ns
WE
HIGH to Low-Z Output
3
—
3
—
ns
Notes:
1. Test conditions for IS61WV3216BLL assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input
pulse levels of 0V to V
DD
V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS64WV3216BLL-15TLA3 | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 15ns 44-Pin TSOP-II |
| IS64WV3216DBLL/DBLS | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV51216BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64WV51216BLL-10CTA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64WV51216BLL-10CTLA3 | 功能描述:靜態(tài)隨機存取存儲器 8M (512Kx16) 10ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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