參數(shù)資料
型號: IS64WV3216BLL
廠商: Integrated Silicon Solution, Inc.
英文描述: 32K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 32K的× 16 HIGH-SPEED的CMOS靜態(tài)RAM
文件頁數(shù): 4/16頁
文件大?。?/td> 104K
代理商: IS64WV3216BLL
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
ISSI
IS64WV3216BLL
IS61WV3216BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –1.0 mA
2.3
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
相關PDF資料
PDF描述
IS64WV3216BLL-15BA3 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV3216BLL-15BLA3 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV3216BLL-15TA3 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV3216BLL-15TLA3 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IS64WV3216BLL-15BA3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV3216BLL-15BLA3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV3216BLL-15CTLA3 功能描述:靜態(tài)隨機存取存儲器 512Kb (32Kx16) Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV3216BLL-15CTLA3-TR 功能描述:靜態(tài)隨機存取存儲器 512Kb (32Kx16) Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV3216BLL-15TA3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM