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參數(shù)資料
| 型號： | IS65C1024AL-45QA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 45 ns, PDSO32 |
| 封裝： | 0.450 INCH, PLASTIC, SOP-32 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 75K |
| 代理商： | IS65C1024AL-45QA3 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/24/05
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS62C1024AL
IS65C1024AL
DESCRIPTION
The
ISSI
IS62C1024AL/IS65C1024AL s a ow power, 131,072-
word by 8-bit CMOS static RAM. It is fabricated using high-
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs,
CE1
and CE2. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
FUNCTIONAL BLOCK DIAGRAM
128K x 8 LOW POWER CMOS
STATIC RAM
FEATURES
High-speed access time: 35, 45 ns
Low active power: 100 mW (typical)
Low standby power: 20 μW (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (±10%) power supply
Commercial, Industrial, and Automotive tem-
perature ranges available
Standard Pin Configuration:
—
32-pin SOP/ 32-pin TSOP (Type 1)
Lead free available
A0-A16
CE1
CE2
OE
WE
128K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
JANUARY 2005
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65C1024AL-45QLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C1024AL-45QLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C1024AL-45TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 LOW POWER CMOS STATIC RAM |
| IS65C1024AL-45TLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C1024AL-45TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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