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參數(shù)資料
| 型號： | IS65LV256AL-45ULA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 45 ns, PDSO28 |
| 封裝： | 0.330 MM, LEAD FREE, PLASTIC, SOP-28 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 113K |
| 代理商： | IS65LV256AL-45ULA3 |
IS65LV256AL
IS62LV256AL
ISSI
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/17/06
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
5
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-20 ns
Min. Max.
-45 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
1
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 1 MHz
Com.
Ind.
Auto.
—
—
—
4
5
—
—
—
—
4
5
8
mA
I
CC
2
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
Auto.
typ.
(2)
—
—
—
20
25
—
—
—
—
10
12
20
mA
15
7
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
Auto.
—
—
—
1.5
1.8
—
—
—
—
1.5
1.8
2
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CE
≤
V
DD
– 0.2V,
V
IN
> V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Auto.
typ.
(2)
—
—
—
15
20
—
—
—
—
15
20
50
μA
2
2
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
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