參數(shù)資料
型號(hào)： IS65WV25616BLL-70TA3
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
中文描述： 256K X 16 STANDARD SRAM, 70 ns, PDSO44
封裝： PLASTIC, TSOP2-44
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 109K
代理商： IS65WV25616BLL-70TA3
IS65WV25616ALL, IS65WV25616BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.65-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.65-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
OPERATING RANGE (V
DD
)
Range
A1
A2
Ambient Temperature
-40°C to +85°C
–40°C to +105°C
IS65WV25616ALL
1.65V - 2.2V
1.65V - 2.2V
IS65WV25616BLL
2.5V-3.6V
2.5V-3.6V
A3
–40°C to +125°C
1.65V - 2.2V
2.5V-3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.2 to V
DD
+0.3
–0.2 to V
DD
+0.3
–65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
相關(guān)PDF資料
PDF描述
IS6MC256K 256KB Secondary cache Module(256KB 次級(jí)高速緩沖存儲(chǔ)器模塊)
IS75V16F128GS32 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
IS75V16F128GS32-7065BI 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
IS75V16F64GS16-7080DI 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
IS80C31 CMOS SINGLE CHIP 8-BIT MICROCONTROLLER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS65WV25616BLL-70TLA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 70ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS65WV25616BLL-70TLA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 70ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS65WV25616DBLL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL-45CTLA1 制造商:Integrated Silicon Solution Inc 功能描述:
IS65WV25616DBLL-55CTLA3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*