ISB VCC Current" />
參數(shù)資料
型號: ISL22313TFU10Z
廠商: Intersil
文件頁數(shù): 11/15頁
文件大?。?/td> 0K
描述: IC POT DGTL 256TP LN LP 10-MSOP
標(biāo)準(zhǔn)包裝: 1,000
系列: XDCP™
接片: 256
電阻(歐姆): 100k
電路數(shù): 1
溫度系數(shù): 標(biāo)準(zhǔn)值 50 ppm/°C
存儲器類型: 非易失
接口: I²C(設(shè)備位址)
電源電壓: 2.25 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 10-TFSOP,10-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 10-MSOP
包裝: 管件
5
FN6421.0
July 17, 2007
ISB
VCC Current (standby)
VCC = +5.5V, V- = -5.5V @ +85°C, I
2C
interface in standby state
0.2
1.5
A
VCC = +5.5V, V- = -5.5V @ +125°C, I
2C
interface in standby state
12.5
A
VCC = +2.25V, V- = -2.25V @ +85°C, I
2C
interface in standby state
0.1
1
A
VCC = +2.25V, V- = -2.25V @ +125°C, I
2C
interface in standby state
0.5
2
A
IV-SB
V- Current (standby)
V- = -5.5V, VCC = +5.5V @ +85°C, I
2C
interface in standby state
-2.5
-0.7
A
V- = -5.5V, VCC = +5.5V @ +125°C, I
2C
interface in standby state
-4
-3
A
V- = -2.25V, VCC = +2.25V @ +85°C, I
2C
interface in standby state
-1.5
-0.3
A
V- = -2.25V, VCC = +2.25V @ +125°C, I
2C
interface in standby state
-3
-1
A
ISD
VCC Current (shutdown)
VCC = +5.5V, V- = -5.5V @ +85°C, I
2C
interface in standby state
0.2
1.5
A
VCC = +5.5V, V- = -5.5V @ +125°C, I
2C
interface in standby state
12.5
A
VCC = +2.25V, V- = -2.25V @ +85°C, I
2C
interface in standby state
0.1
1
A
VCC = +2.25V, V- = -2.25V @ +125°C, I
2C
interface in standby state
0.5
2
A
IV-SB
V- Current (standby)
V- = -5.5V, VCC = +5.5V @ +85°C, I
2C
interface in standby state
-2.5
-0.7
A
V- = -5.5V, VCC = +5.5V @ +125°C, I
2C
interface in standby state
-4
-3
A
V- = -2.25V, VCC = +2.25V @ +85°C, I
2C
interface in standby state
-1.5
-0.3
A
V- = -2.25V, VCC = +2.25V @ +125°C, I
2C
interface in standby state
-3
-1
A
ILkgDig
Leakage current, at pins A0, A1, SDA,
and SCL
Voltage at pin from GND to VCC
-1
1
A
tDCP
(Note 16)
DCP wiper response time
SCL falling edge of last bit of DCP data byte
to wiper new position
1.5
s
tShdnRec
(Note 16)
DCP recall time from shutdown mode
SCL falling edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on recall voltage
Minimum VCC at which memory recall occurs
1.9
2.1
V
VCC Ramp
VCC ramp rate
0.2
V/ms
tD
Power-up delay
VCC above Vpor, to DCP Initial Value
Register recall completed, and I2C Interface
in standby state
5ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T
≤ +55°C50
Years
tWC
(Note 17)
Non-volatile Write cycle time
12
20
ms
Operating Specifications Over the recommended operating conditions unless otherwise specified. Limits are established by
characterization. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 18)
TYP
(Note 4)
MAX
(Note 18)
UNIT
ISL22313
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