ISL28617
14
FN6562.1
October 17, 2013
2. Designing with the ISL28617
To complete a working design, the following procedure is
recommended and explained in this section:
1. Define the output voltage swing
2. Set the feedback resistor value, RFB
3. Set the input gain resistor value, RIN
3. Set the VCO, VEO power supply voltages
4. Set the VCC and VEE supply voltages
The gain of the instrumentation amplifier is set by the resistor
ratio RFB/RIN (Equation 7), and the maximum output swing is set by the absolute value of the feedback resistor RFB (Equation 8). VCO and VEO supply power to the rail-to-rail output stage and
define the maximum output voltage swing at the ±VOUT
différentiel output pins. Power supply pins VCC and VEE power the
feedback amplifiers which, require an additional ±3V beyond the
VCO and VEO voltages to maintain linear operation of the
feedback GM stage.
Setting the Feedback Gain Resistor RFB
Resistor RFB defines the maximum differential voltage at output
terminals +VOUT to -VOUT. External resistor RFB and the differential
100A current sources define the maximum dynamic range of
the feedback stage, which defines the maximum differential
output swing of the output stage. Overload circuitry allows
>100A to flow through RFB to maintain feedback, but linearity is
degraded. Therefore, it is a good practice to keep the maximum
linear dynamic range to within ±80% of the maximum I*R across
the resistor.
In cases where large pulse overshoot is expected, the maximum
current in Equation
8 could be reduced to 50% for additional
penalty for increasing the feedback resistor value is higher DC
offset voltage and noise.
Output voltages that exceed the maximum dynamic range of the
feedback amplifier can degrade phase margin and cause
instability. The plot in Figure
32 shows the maximum differential
output voltage swing vs. resistor value for RFB and RIN using the
80% and 50% current source levels.
Setting the Input Gain Resistor RIN
The input gain resistor RIN is scaled to the feedback resistor
according to the gain Equation
9:The input GM stage uses the same differential current source
arrangement as the feedback stage. Therefore, the amount of
overdrive margin (50%, 80%) included in the calculation for RFB
is also included in the calculation for RIN.
Input Stage Overdrive Considerations
There are a few cases where the input stage can be over driven,
which must be considered in the application. An input signal that
exceeds the maximum dynamic range of the gain resistor RIN,
calculated previously, can cause the ESD diodes to conduct.
When this occurs, a low impedance path from the inputs to the
input gain resistor RIN will result in signal distortion.
High speed input signals that remain within the maximum
dynamic range of the input stage can cause distortion if the input
slew rate exceeds the input stage slew rate (~4V/s). When the
input slews at a faster rate than the GM stage can follow, the
voltage difference appears across the input ESD diodes from
each input and resistor RIN. When the voltage difference is large
enough to cause the diodes to conduct, the input terminals are
shunted to RIN through the 500Ω input protection resistors,
causing distortion during the rise and fall times of the transient
pulse. The distortion will last until the resistor voltage catches up
to the input voltage.
Setting the Power Supply Voltages
The ISL28617 power supplies are partitioned so that the input stage
and feedback stages are powered from a separate pair of supply
pins (VCC, VEE) than the differential output stage (VCO,VEO). This
partitioning provides the user with the ability to adapt the ISL28617
to a wide variety of input signal power sources that would not be
possible if the supplies were strapped together internally (VCC = VCO
and VEE = VEO). However, powering the input and output supplies
from unequal supplies has restrictions that are described in the next
section.
(EQ. 8)
VOUTDIFF= ±80A * RFB
FIGURE 32. RFB, RIN vs. DYNAMIC RANGE
35
30
25
20
15
10
5
0
50
100
150
200
250
300
350
400
DY
N
A
MIC
V
O
LT
AGE
RANGE
(±
V)
RFB, RIN VALUE (k)
VOUT (V) @ 80%
VOUT (V) @ 50%
(EQ. 9)
RIN = RFB/Gain
IN+
RIN
IN-
100A
+
-
+
-
VEE
500
VCC
500
ESD
PROTECTION
ESD
PROTECTION
FIGURE 33. INPUT STAGE ESD PROTECTION DIODES
A1
A2
Q1
Q2