4 FN6969.1 September 19, 2013 Absolute Maximum Ratings Thermal Information VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . " />
參數(shù)資料
型號(hào)： ISL54224IRUZ-T
廠商： Intersil
文件頁(yè)數(shù)： 13/18頁(yè)
文件大?。?/td> 0K
描述： IC MULTIPLEXER DUAL 2:1 10TQFN
標(biāo)準(zhǔn)包裝： 3,000
功能： 多路復(fù)用器
電路： 2 x 2:1
導(dǎo)通狀態(tài)電阻： 20 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 5.25 V
電流 - 電源： 45µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 10-UFQFN
供應(yīng)商設(shè)備封裝： 10-UTQFN（1.8x1.40）
包裝： 帶卷 (TR)
ISL54224
4
FN6969.1
September 19, 2013
Absolute Maximum Ratings
Thermal Information
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 6.5V
VDD to Dx. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5V
Dx to HSD1x, HSD2x. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.6V
Input Voltages
HSD2x, HSD1x . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3V to 6.5V
SEL, OE/ALM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 6.5V
Output Voltages
D+, D- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to 6.5V
Continuous Current (HSD2x, HSD1x) . . . . . . . . . . . . . . . . . . . . . . . . . ±40mA
Peak Current (HSD2x, HSD1x)
(Pulsed 1ms, 10% Duty Cycle, Max). . . . . . . . . . . . . . . . . . . . . . ±100mA
ESD Rating:
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >5.5kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >250V
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2kV
Latch-up Tested per JEDEC; Class II Level A . . . . . . . . . . . . . . . . . . .at 85°C
Thermal Resistance (Typical)
θJA (°C/W)
θJC (°C/W)
10 Ld TQFN Package (Note 6, 7) . . . . . . .
210
165
10 Ld TDFN Package (Notes 8, 9) . . . . . . .
58
22
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
VDD Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7V to 5.25V
Logic Control Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.25V
Analog Signal Range
VDD = 2.7V to 5.25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3.6V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
6.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
7. For
θJC, the “case temp” location is taken at the package top center.
8.
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
9. For
θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications - 2.7V to 5.25V Supply Test Conditions: VDD = +3.3V, GND = 0V, VSELH = 1.4V, VSELL = 0.5V,
VOE/ALMH =1.4V, VOE/ALML = 0.5V, (Note 10), Unless Otherwise Specified.
Boldface limits apply over the operating temperature range, -40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes 11, 12) TYP
MAX
(Notes 11, 12) UNITS
ANALOG SWITCH CHARACTERISTICS
ON-Resistance, rON
(High-Speed)
VDD = 2.7V, SEL = 0.5V or 1.4V, OE/ALM = 1.4V, IDx = 17mA, VHSD1x
or VHSD2x = 0V to 400mV (see Figure 5, Note 15)
25
-
6.5
7
Full
-
9
rON Matching Between
Channels,
ΔrON (High-Speed)
VDD = 2.7V, SEL = 0.5V or 1.4V, OE/ALM = 1.4V, IDx = 17mA, V
VHSD1x or VHSD2x = Voltage at max rON, (Notes 14, 15)
25
-
0.2
0.45
Full
-
0.5
rON Flatness, RFLAT(ON)
(High-Speed)
VDD = 2.7V, SEL = 0.5V or 1.4V, OE/ALM = 1.4V, IDx = 17mA, VHSD1x
or VHSD2x = 0V to 400mV, (Notes 13, 15)
25
-
0.3
0.5
Full
-
1
ON-Resistance, rON
VDD = 3.3V, SEL = 0.5V or 1.4V, OE/ALM = 1.4V, ICOMx = 17mA, VD+
or VD-= 3.3V (See Figure 6, Note 15)
25
-
12
20
Full
-
25
OFF Leakage Current,
IHSD1x(OFF)
VDD = 5.25V, SEL = VDD and OE/ALM = VDD or OE/ALM = 0V,
VDx = 0.3V, 3.3V, VHSD1x = 3.3V, 0.3V, VHSD2x = 0.3V, 3.3V
25
-20
1
20
nA
Full
-30
-
30
nA
ON Leakage Current,
IHSD1x(ON)
VDD = 5.25V, SEL = 0V, OE/ALM = VDD, VDx = 0.3V, 3.3V,
VHSD1X = 0.3V, 3.3V, VHSD2x = 3.3V, 0.3V
25
-
2
3
A
Full
-
4
A
OFF Leakage Current,
IHSD2x(OFF)
VDD = 5.25V, SEL = 0V and OE/ALM = VDD or OE/ALM = 0V,
VDx = 3.3V, 0.3V, VHSD2x = 0.3V, 3.3V, VHSD1X = 3.3V, 0.3V
25
-20
1
20
nA
Full
-30
-
30
nA
ON Leakage Current,
IHSD2x(ON)
VDD = 5.25V, SEL = VDD, OE/ALM = VDD, VDx = 0.3V, 3.3V,
VHSD2x = 0.3V, 3.3V, VHSD1x = 3.3V, 0.3V
25
-
2
3
A
Full
-
4
A
Power OFF Leakage Current,
ID+, ID-
VDD = 0V, VD+ = 5.25V, VD-= 5.25V, SEL = OE/ALM = VDD
25
-
5
13
A
Power OFF Logic Current, ISEL,
IOE/ALM
VDD = 0V, SEL = OE/ALM = 5.25V
25
-
19
26
A
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