4 FN7918.0 December 21, 2011 Absolute Maximum Ratings Thermal Information VDD
參數(shù)資料
型號: ISL54233IRTZ-T
廠商: Intersil
文件頁數(shù): 13/18頁
文件大?。?/td> 0K
描述: IC MULTIPLEXER
標準包裝: 6,000
系列: *
ISL54233
4
FN7918.0
December 21, 2011
Absolute Maximum Ratings
Thermal Information
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 5.5V
Input Voltages
1D+, 1D-, 2D+, 2D-, 3D+, 3D- . . . . . . . . . . . . . . . . . . . . . . . . . . -2V to 5.5V
C0, C1 (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 5.5V
Output Voltages
COM-, COM+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2V to 5.5V
Continuous Current (1D-, 1D+, 2D-, 2D+, 3D-, 3D+). . . . . . . . . . . . . . . . . ±40mA
Peak Current (1D-, 1D+, 2D-, 2D+, 3D-, 3D+)
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . . . . . ±100mA
ESD Rating:
Human Body Model (Tested per JESD22-A114F) . . . . . . . . . . . . . . . >5kV
Machine Model (Tested per JESD22-A115B) . . . . . . . . . . . . . . . . . >400V
Charged Device Model (Tested per JESD22-C110D) . . . . . . . . . . . . >2kV
Latch-up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . . . .at +85°C
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
12 Ld UTQFN Package (Notes 7, 10) . . . . .
155
90
12 Ld TQFN Package (Notes 8, 9) . . . . . . .
58
1.0
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . +150°C
Maximum Storage Temperature Range. . . . . . . . . . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7V to 4.6V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
6. Signals on C1 and C0 exceeding GND by specified amount are clamped. Limit current to maximum current ratings.
7.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
8.
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
9. For
θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
10. For
θJC, the “case temp” location is taken at the package top center.
Electrical Specifications - 2.7V to 3.6V Supply TestConditions: VDD=+3.0V,GND=0V,VC0H,VC1H=1.4V,VC0L,VC1L =0.5V,
(Note 11), Unless Otherwise Specified. Boldface limits apply over the operating temperature range, -40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes
TYP
MAX
(Notes
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
VDD = 2.7V to 4.6V
Full
-1
-
VDD
V
ON-Resistance, rON
VDD = 2.7V, ICOMx = 17mA, VD+ or VD- = 0V to 400mV
(see Figure 5, Note 15)
25
-
6
8
Full
-
10
rON Matching Between Channels, ΔrON VDD = 2.7V, ICOMx = 17mA, VD+ or VD- =Voltage at max rON,
(Notes 15, 16)
25
-
0.07
0.5
Full
-
0.55
rON Flatness, rFLAT(ON)
VDD = 2.7V, ICOMx = 17mA, VD+ or VD- = 0V to 400mV,
(Notes 14, 15)
25
-
0.32
0.8
Full
-
1.2
ON-Resistance, rON
VDD = 3.3V, ICOMx = 17mA, VD+ or VD- = 3.3V (see Figure 5,
Note 15)
+25
-
9.5
15
Full
-
20
OFF Leakage Current, IXD+(OFF) or
IXD-(OFF), ICOMX(OFF)
VDD = 4.6V, All OFF Mode (C0 = 0.5V, C1 = 0.5V), VCOM- or
VCOM+ = 0.3V, 3.3V, VXD+ or VXD- = 3.3V, 0.3V
25
-15
-
15
nA
Full
-20
-
20
nA
ON Leakage Current, IXD+(ON) or
IXD-(ON), ICOMX(ON)
VDD = 4.6V, VXD+ or VXD- = 0.3V, 3.3V, VCOM- or VCOM+ = 0.3V,
3.3V
25
-20
-
20
nA
Full
-25
-
25
nA
DPDT DYNAMIC CHARACTERISTICS
All OFF to ON or ON to All OFF Address
Transition Time, tTRANS
VDD = 2.7V, RL = 50Ω, CL = 10pF, (see Figure 3)
25
-
125
-
ns
Data Channel to Data Channel Address
Transition Time, tTRANS
VDD = 2.7V, RL = 50Ω, CL = 10pF, (see Figure 3)
25
-
125
-
ns
Break-Before-Make Time Delay, tD
VDD = 3.6V, RL = 50Ω, CL = 10pF, (see Figure 4)
25
-
30
-
ns
Skew, (tSKEWOUT - tSKEWIN)
VDD = 3.0V, RL = 45Ω, CL = 10pF, tR = tF = 500ps at 480Mbps,
(Duty Cycle = 50%) (see Figure 8)
25
-
75
-
ps
Total Jitter, tJ
VDD = 3.0V, RL = 50Ω, CL = 10pF, tR = tF = 500ps at 480Mbps
25
-
210
-
ps
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