參數(shù)資料
型號: ISL6269
廠商: Intersil Corporation
英文描述: Single Phase PWM Controller for Mobile Graphical Processing Unit (GPU)
中文描述: 單相PWM控制器,移動圖形處理單元(GPU)
文件頁數(shù): 10/17頁
文件大?。?/td> 395K
代理商: ISL6269
10
FN9177.0
June 14, 2005
LDO
Voltage applied to the VIN pin with respect to the GND pin is
regulated to +5VDC by an internal low-dropout voltage
regulator (LDO). The output of the LDO is called V
CC
, which
is the bias voltage used by the IC internal circuitry. The LDO
output is routed to the VCC pin and requires a ceramic
capacitor connected to the GND pin to stabilize the LDO and
to decouple load transients.
When the EN pin rises above the V
ENR
threshold, V
CC
will
turn on and rise to its regulation voltage. The LDO regulates
V
CC
by pulling up towards the voltage at the VIN pin; the
LDO has no pull-down capability.
POR and Soft-Start
The power-on reset (POR) circuit monitors V
CC
for the
V
CCR
(rising) and V
CCF
(falling) voltage thresholds. The
purpose of soft-start is to limit the inrush current through the
output capacitors when the converter first turns on.The PWM
soft-start sequence initializes once V
CC
rises above the
V
CCR
threshold, beginning from below the V
CCF
threshold.
The ISL6269 uses a digital soft-start circuit to ramp the
output voltage of the converter to the programmed regulation
setpoint in approximately 1.5ms. The converter regulates to
600mV at the FB pin with respect to the GND pin. During
soft-start a digitally derived voltage reference forces the
converter to regulate from 0V to 600mV at the FB pin.
When the EN pin is pulled below the V
ENF
threshold, the
LDO stops regulating and PWM immediately stops,
regardless of the falling V
CC
voltage. The soft-start
sequence can be reinitialized and fault latches reset, once
V
CC
falls below the V
CCF
threshold.
MOSFET Gate-Drive Outputs
The ISL6269 incorporates a MOSFET driver that controls
both high-side and low-side N-Channel MOSFETS. The
drivers are optimized for low duty-cycle applications
prevalent with large step down voltages. At low duty-cycle,
the low-side MOSFET conducts for a much longer time in a
switching period than the high-side MOSFET, necessitating
lower r
DS(ON)
at the expense of larger parasitic capacitance.
The low-side gate driver is therefore sized much larger to
meet this application requirement. The larger sink current
capability enables the low-side gate driver to hold the gate-
source voltage of the MOSFET below its V
GSTH
as current
conducts through the drain-to-gate parasitic capacitance.
Both drivers incorporate adaptive shoot-through protection
to prevent high-side and low-side MOSFETS from
conducting simultaneously and shorting the input supply.
During turn-off of the low-side MOSFET, the LG to PGND
voltage is monitored until it reaches a 1V threshold, at which
time the UG driver is allowed to switch. During turn-off of the
high-side MOSFET, the UG to PHASE voltage is monitored
until it reaches a 1V threshold, at which time the LG driver is
allowed to switch.
The input power for the LG driver circuit is sourced directly
from the PVCC pin. The input power for the UG driver circuit
is sourced from a “boot” capacitor connected from the BOOT
pin to the PHASE pin. The same supply that is connected to
the PVCC pin is used to charge the boot capacitor via the
internal Schottky diode of the IC.
UG
LG
t
LGFUGR
t
UGFLGR
FIGURE 4. GATE DRIVE TIMING DIAGRAM
ISL6269
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