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參數(shù)資料
| 型號(hào)： | ISL6563CR |
| 廠商： | INTERSIL CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Two-Phase Multi-Phase Buck PWM Controller with Integrated MOSFET Drivers |
| 中文描述： | SWITCHING CONTROLLER, 255 kHz SWITCHING FREQ-MAX, PQCC24 |
| 封裝： | 4 X 4 MM, PLASTIC, MO-220-VGGD-2, QFN-24 |
| 文件頁(yè)數(shù)： | 14/19頁(yè) |
| 文件大小： | 516K |
| 代理商： | ISL6563CR |
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14
FN9126.6
April 13, 2005
lower-MOSFET body diode. This term is dependent on the
diode forward voltage at I
M
, V
D(ON)
; the switching
frequency, f
S
; and the length of dead times, t
d1
and t
d2
, at
the beginning and the end of the lower-MOSFET conduction
interval, respectively.
The above equation assumes the current through the lower
MOSFET is always positive; if so, the total power dissipated
in each lower MOSFET is approximated by the summation of
P
LMOS1
and P
LMOS2
.
UPPER MOSFET POWER CALCULATION
In addition to r
DS(ON)
losses, a large portion of the upper-
MOSFET losses are switching losses, due to currents
conducted through the device while the input voltage is
present as V
DS
. Upper MOSFET losses can be divided into
separate components, separating the upper-MOSFET
switching losses, the lower-MOSFET body diode reverse
recovery charge loss, and the upper MOSFET r
DS(ON)
conduction loss.
In most typical circuits, when the upper MOSFET turns off, it
continues to conduct the inductor current until the voltage at
the phase node falls below ground. Once the lower
MOSFET begins conducting (via its body diode or
enhancement channel), the current in the upper MOSFET
falls to zero. In the following equation, the required time for
this commutation is t
1
and the associated power loss is
P
UMOS,1
.
Similarly, the upper MOSFET begins conducting as soon as
it begins turning on. Assuming the inductor current is in the
positive domain, the upper MOSFET sees approximately the
input voltage applied across its drain and source terminals,
while it turns on and starts conducting the inductor current.
This transition occurs over a time t
2
, and the approximate
the power loss is P
UMOS,2
.
A third component involves the lower MOSFET’s reverse-
recovery charge, Q
RR
. Since the lower MOSFET’s body
diode conducts the full inductor current before it has fully
switched to the upper MOSFET, the upper MOSFET has to
provide the charge required to turn off the lower MOSFET’s
body diode. This charge is conducted through the upper
MOSFET across VIN, the power dissipated as a result,
P
UMOS,3
can be approximated as:
Lastly, the conduction loss part of the upper MOSFET’s
power dissipation, P
UMOS,4,
can be calculated using the
following equation:
In this case, of course, r
DS(ON)
is the ON resistance of the
upper MOSFET.
The total power dissipated by the upper MOSFET at full load
can be approximated as the summation of these results.
Since the power equations depend on MOSFET parameters,
choosing the correct MOSFETs can be an iterative process
that involves repetitively solving the loss equations for
different MOSFETs and different switching frequencies until
converging upon the best solution.
Current Sensing
The resistor connected between the ISEN and VCC pins
determines the gain in the load-line regulation and the
channel-current balance loop. Select the value for this
resistor based on the room temperature r
DS(ON)
of the lower
MOSFETs and the full-load total output current, I
FL
.
r
)
50 10
6
Load Line Regulation Resistor
The load-line regulation resistor is labeled, R1 in Figure 1,
depends on the desired full-load droop voltage. At full load,
the current determined by R
ISEN
is fed into the FB pin and
creates the output voltage droop across R1. Thus, the load
line regulation resistor can be computed using the following
equation:
Frequency Compensation
The load-line regulated converter behaves in a similar
manner to a peak-current mode controller because the two
poles at the output filter LC resonant frequency split with the
introduction of current information into the control loop. The
final location of these poles is determined by the system
function, the gain of the current signal, and the value of the
compensation components, R
2
and C
2
.
The solution to the system equations can be fairly
complicated. Fortunately, there is a simple approximation
that comes very close to an optimal solution. Treating the
system as though it were a voltage mode regulator by
compensating the LC poles and the ESR zero of the voltage
mode approximation yields a solution that is always stable
with very close to ideal transient performance.
P
LMOS2
V
D ON
)
f
S
I
-------------
I
--------
+
t
d1
I
-------------
I
--------
–
t
d2
+
=
P
UMOS 1
,
V
IN
I
2
-------------
I
,
2
-------------
+
t
1
2
----
f
S
≈
P
UMOS 2
,
V
IN
I
-------------
I
,
-------------
–
t
2
2
----
f
S
≈
P
UMOS 3
,
V
IN
Q
rr
f
S
=
P
UMOS 4
,
r
DS ON
)
I
2
-------------
2
d
I
2
---------
+
=
R
ISEN
–
-----------------------
I
-------
=
R
1
V
2 R
DS ON
)
FL
------------------------------------------------------
=
ISL6563
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| ISL6563CR-T | 功能描述:IC CTRLR PWM MULTIPHASE 24-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - 專用型 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:2,000 系列:- 應(yīng)用:電源，ICERA E400，E450 輸入電壓:4.1 V ~ 5.5 V 輸出數(shù):10 輸出電壓:可編程 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:42-WFBGA，WLCSP 供應(yīng)商設(shè)備封裝:42-WLP 包裝:帶卷 (TR) |
| ISL6563CR-TK | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| ISL6563CRZ | 功能描述:電流型 PWM 控制器 P6 TWO PHS CONT INTEGRTD DRVRS DESKT RoHS:否 制造商:Texas Instruments 開關(guān)頻率:27 KHz 上升時(shí)間: 下降時(shí)間: 工作電源電壓:6 V to 15 V 工作電源電流:1.5 mA 輸出端數(shù)量:1 最大工作溫度:+ 105 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSSOP-14 |
| ISL6563CRZ-T | 功能描述:電流型 PWM 控制器 P6 TWO PHS CONT INTEGRTD DRVRS DESKT RoHS:否 制造商:Texas Instruments 開關(guān)頻率:27 KHz 上升時(shí)間: 下降時(shí)間: 工作電源電壓:6 V to 15 V 工作電源電流:1.5 mA 輸出端數(shù)量:1 最大工作溫度:+ 105 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSSOP-14 |
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