參數(shù)資料
型號(hào)： ISL6612AEIBZ-T
廠商： INTERSIL CORP
元件分類(lèi)： MOSFETs
英文描述： Circular Connector; No. of Contacts:46; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-46 RoHS Compliant: No
中文描述： HALF BRDG BASED MOSFET DRIVER, PDSO8
封裝： ROHS COMPLIANT, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 325K
代理商： ISL6612AEIBZ-T
5
FN9159.4
July 25, 2005
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Input Voltage (V
PWM
). . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V
DC
to V
BOOT
+ 0.3V
V
PHASE
- 3.5V (<100ns Pulse Width, 2μJ) to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to V
PVCC
+ 0.3V
GND - 5V (<100ns Pulse Width, 2μJ) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to 15V
DC
GND - 8V (<400ns, 20μJ) to 30V (<200ns, V
BOOT-GND
<36V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±
10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . .5V to 12V
±
10%
Thermal Resistance
SOIC Package (Note 1). . . . . . . . . . . .
EPSOIC Package (Notes 2, 3) . . . . . .
DFN Package (Notes 2, 3). . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
θ
JA
(°C/W)
100
50
48
θ
JC
(°C/W)
N/A
7
7
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
3. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
ISL6612A, f
PWM
= 300kHz, V
VCC
=12V
-
7.2
-
mA
ISL6613A, f
PWM
= 300kHz, V
VCC
=12V
-
4.5
-
mA
I
VCC
ISL6612A, f
PWM
= 1MHz, V
VCC
= 12V
-
11
-
mA
ISL6613A, f
PWM
= 1MHz, V
VCC
= 12V
-
5
-
mA
Gate Drive Bias Current
I
PVCC
ISL6612A, f
PWM
= 300kHz, V
PVCC
= 12V
-
2.5
-
mA
ISL6613A, f
PWM
= 300kHz, V
PVCC
= 12V
-
5.2
-
mA
I
PVCC
ISL6612A, f
PWM
= 1MHz, V
PVCC
= 12V
-
7
-
mA
ISL6613A, f
PWM
= 1MHz, V
PVCC
= 12V
-
13
-
mA
POWER-ON RESET AND ENABLE
VCC Rising Threshold
T
A
= 0°C to 85°C
9.35
9.80
10.00
V
VCC Rising Threshold
T
A
= -40°C to 85°C
8.35
9.80
10.00
V
VCC Falling Threshold
T
A
= 0°C to 85°C
7.35
7.60
8.00
V
VCC Falling Threshold
T
A
= -40°C to 85°C
6.35
7.60
8.00
V
PWM INPUT (See Timing Diagram on Page 7)
Input Current
I
PWM
V
PWM
= 5V
-
450
-
μA
V
PWM
= 0V
-
-400
-
μA
PWM Rising Threshold
VCC = 12V
-
3.00
-
V
PWM Falling Threshold
VCC = 12V
-
2.00
-
V
Typical Three-State Shutdown Window
VCC = 12V
1.80
-
2.40
V
Three-State Lower Gate Falling Threshold
VCC = 12V
-
1.50
-
V
Three-State Lower Gate Rising Threshold
VCC = 12V
-
1.00
-
V
ISL6612A, ISL6613A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL6612AIB 制造商:Intersil Corporation 功能描述:
ISL6612AIBZ 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類(lèi)型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱(chēng):*IR2127
ISL6612AIBZ-T 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:6,000 系列:*
ISL6612AIR 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
ISL6612AIR-T 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
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