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參數(shù)資料
| 型號： | ISL6612AEIBZ-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Circular Connector; No. of Contacts:46; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-46 RoHS Compliant: No |
| 中文描述： | HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 325K |
| 代理商： | ISL6612AEIBZ-T |
9
FN9159.4
July 25, 2005
the selected MOSFETs. The total gate drive power losses
due to the gate charge of MOSFETs and the driver’s internal
circuitry and their corresponding average driver current can
be estimated with Equations 2 and 3, respectively,
where the gate charge (Q
G1
and Q
G2
) is defined at a
particular gate to source voltage (V
GS1
and V
GS2
) in the
corresponding MOSFET datasheet; I
Q
is the driver’s total
quiescent current with no load at both drive outputs; N
Q1
and N
Q2
are number of upper and lower MOSFETs,
respectively; UVCC and LVCC are the drive voltages for
both upper and lower FETs, respectively. The I
Q*
VCC
product is the quiescent power of the driver without
capacitive load and is typically 116mW at 300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R
G1
and R
G2
) and the internal gate resistors
(R
GI1
and R
GI2
) of MOSFETs. Figures 3 and 4 show the
typical upper and lower gate drives turn-on transition path.
The power dissipation on the driver can be roughly
estimated as:
Layout Considerations
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between the power components is required for good
airflow. The traces from the drivers to the FETs should be
kept short and wide to reduce the inductance of the traces
and to promote clean drive signals.
P
Qg_TOT
P
Qg_Q1
P
Qg_Q2
I
Q
VCC
+
+
=
(EQ. 2)
P
Qg_Q1
Q
---------------------------------------
UVCC
2
GS1
F
SW
N
Q1
=
P
Qg_Q2
Q
--------------------------------------
LVCC
2
GS2
F
SW
N
Q2
=
I
DR
Q
-----------------------------------------------------
UVCC
GS1
N
Q
----------------------------------------------------
LVCC
GS2
N
+
F
SW
I
Q
+
=
(EQ. 3)
P
DR
P
DR_UP
P
DR_LOW
I
Q
VCC
+
+
=
(EQ. 4)
P
DR_UP
R
HI1
R
EXT1
---------------+
R
LO1
R
EXT1
---------------+
+
P
---------------------
=
P
DR_LOW
R
HI2
R
EXT2
---------------+
R
LO2
R
EXT2
-----------------+
+
P
---------------------
=
R
EXT1
R
G1
R
Q1
-------------
+
=
R
EXT2
R
G2
R
Q2
-------------
+
=
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Q1
D
S
G
R
GI1
R
G1
BOOT
R
HI1
C
DS
C
GS
C
GD
R
LO1
PHASE
UVCC
LVCC
Q2
D
S
G
R
GI2
R
G2
R
HI2
C
DS
C
GS
C
GD
R
LO2
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| ISL6612AIB | 制造商:Intersil Corporation 功能描述: |
| ISL6612AIBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6612AIBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:6,000 系列:* |
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