參數(shù)資料
型號(hào): ISL95811WFRTZ-TK
廠商: Intersil
文件頁數(shù): 9/14頁
文件大?。?/td> 0K
描述: IC POT 256TAPS 5BYTES 8-TDFN
標(biāo)準(zhǔn)包裝: 1,000
系列: XDCP™
接片: 256
電阻(歐姆): 10k
電路數(shù): 1
溫度系數(shù): 標(biāo)準(zhǔn)值 ±45 ppm/°C
存儲(chǔ)器類型: 非易失
接口: I²C
電源電壓: 2.7 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-WDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 8-TDFN(3x3)
包裝: 帶卷 (TR)
4
FN6759.1
October 6, 2008
RESISTOR MODE (Measurements between RW and RL with RH not connected, or between RW and RH with RL not connected)
RINL (Note 14)
Integral Non-Linearity
DCP register set between 1 hex
and FF hex. Monotonic over all
tap positions.
W option
-3
3
MI
(Note 11)
U option
-1
1
MI
(Note 11)
RDNL (Note 13)
Differential Non-Linearity
DCP register set between 1 hex
and FF hex. Monotonic over all
tap positions
W option
-0.75
0.75
MI
(Note 11)
U option
-0.5
0.5
MI
(Note 11)
Roffset (Note 12) Offset
W option
0
1
5
MI
(Note 11)
U option
0
0.5
2
MI
(Note 11)
TCR
(Note 15, 16)
Resistance Temperature
Coefficient
DCP register set between 20 hex and FF
hex
±45
ppm/°C
Analog Specifications
Over recommended operating conditions unless otherwise stated. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 18)
TYP
(Note 4)
MAX
(Note 18)
UNIT
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 18)
TYP
(Note 4)
MAX
(Note 18) UNITS
ICC1
VCC Supply Current
(Volatile Write/Read)
fSCL = 400kHz; SDA = Open; (for I
2C, Active,
Read and Volatile Write States only)
100
A
ICC2
VCC Supply Current
(Non-volatile Write)
fSCL = 400kHz; SDA = Open; (for I
2C, Active,
Non-volatile Write State only)
2mA
ISB
VCC Current (Standby)
VCC = +5.5V, I
2C Interface in Standby State
10
A
VCC = +3.6V, I
2C Interface in Standby State
5
A
ILkgDig
Leakage Current, at Pins SDA, SCL,
and WP Pins
Voltage at pin from GND to VCC
-1
1
A
tDCP
DCP Wiper Response Time
SCL falling edge of last bit of DCP Data
Byte to wiper change
1s
Vpor
Power-On Recall Voltage
Minimum VCC at which memory recall occurs
1.8
2.6
V
VCCRamp
VCC Ramp Rate
0.2
V/ms
tD
Power-Up Delay
VCC above VPOR, to DCP Initial Value Register
recall completed, and I2C Interface in standby
state
3ms
EEPROM SPECIFICATIONS
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature
≤ +55°C
50
Years
SERIAL INTERFACE SPECIFICATIONS
VIL
WP, SDA, and SCL Input Buffer LOW
Voltage
-0.3
0.3*VCC
V
VIH
WP, SDA, and SCL Input Buffer
HIGH Voltage
0.7*VCC
VCC +
0.3
V
Hysteresis (Note 16) SDA and SCL Input Buffer Hysteresis
0.05*VCC
V
VOL
SDA Output Buffer LOW Voltage,
Sinking 4mA
00.4
V
Cpin (Note 16)
WP, SDA, and SCL Pin Capacitance
10
pF
ISL95811
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