- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358013 > ITT2208GL 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | ITT2208GL |
| 元件分類： | 放大器 |
| 英文描述： | 1920 MHz - 1980 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4MM X 4MM SMALL PROFILE, PLASTIC, MLP-20 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 28K |
| 代理商： | ITT2208GL |
3.5V 0.8W RF Power Amplifier IC for WCDMA
ITT2208GL
ADVANCED
INFORMATION
Advanced Information - Specifications Subject to Change Without Notice
902571 --, July 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel:
1-540-563-3949
1-888-563-3949
(USA)
Fax: 1-540-563-8616
1
FEATURES
Single Bias
Class AB Operation
Small Profile 20-pin Micro Leadframe Plastic Package
29 dBm Linear Power Output
27 dB Power Gain
35% Power Added Efficiency
GENERAL DESCRIPTION
This amplifier is a high power, high efficiency linear amplifier IC
targeting 3V handheld systems. The device is manufactured with
GaAs Heterojunction Bipolar Transistors (HBTs) and is intended to
be the final amplification stage in hand-held digital equipment and
spread spectrum systems. The power amplifier is packaged in a
20pin 4mm x 4mm MLP (Micro Leadframe
Package).
1
5
4
3
2
6
10
9
8
7
15
11
12
13
14
20
16
17
18
19
RFin
Vcc1
Vcc1
Vcc1
GND
Vc0
Vcc2/RFout
Vcc2/RFout
Vcc2/RFout
GND
GND
Vctrl2
Vctrl1
GND
Control
Control
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
Rating
DC Supply Voltage
DC Control Bias Voltage
RF Input Power
Junction Temperature
Storage Temperature Range
Symbol
V
CC
V
CTRL
P
IN
T
J
T
STG
Value
8
3
10
150
-40 to +150
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
CC
= 3.5 V, T
A
= 25 °C, 50
System, output externally matched
Characteristic
Frequency Range
Load Power
(P
IN
=+2 dBm, V
CTRL
set for max P
OUT
)
Load Power
(P
IN
=+2 dBm, V
CC
=2.9V, T
A
=90
o
C)
Power Added Efficiency
(P
OUT
=29 dBm set by V
CTRL
with P
IN
=+2 dBm)
Control Voltage Range
(All operating conditions)
Control Current
(All operating conditions)
Backoff Collector Current
(P
OUT
=10dBm, P
IN
controlled, Vctrl=TBD)
Off State Supply Current
(V
CTRL
= 0.2V)
Adjacent Channel Power
(5 MHz from carrier, BW=4.096 MHz, P
OUT
= -46 to +29 dBm)
Adjacent Channel Power
(10 MHz from carrier, BW=4.096 MHz, P
OUT
= -46 to +29 dBm)
Input VSWR
(P
OUT
= -46 to +29 dBm, P
IN
controlled)
, 50
Ref.
Harmonics
(P
OUT
=29 dBm, P
IN
=+2 dBm)
Noise Power in Rx Band
(2110-2170MHz)
Off-state Isolation
(V
CC
=0.0V
,
P
IN
=+2 dBm)
Rise and Fall Time
Symbol
—
P
OUT
P
OUT
PAE
V
CTRL
I
CTRL
I
CC
I
CC
ACP
ACP
Min
1920
28
26.5
30
0.2
——
——
Typ
——
29
28
35
Max
1980
—
—
—
2.7
5.0
100
30
-40
-51
2:1
-35
Unit
MHz
dBm
dBm
%
V
mA
mA
μ
A
dBc
dBc
—
dBc
dBm/Hz
dB
μ
s
——
—
-45
-53
1.5:1
-40
-139
——
——
—
No(Rx)
—
-35
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ITT333104BD | RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| ITT8401FM | RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| ITT9013GU | 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| IVA-05208 | 0 MHz - 1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| IVT-28P | 15 W, INVERTER TRANSFORMER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ITT2303GJ | 制造商:M/A-COM Technology Solutions 功能描述:2.45GHZ MMIC MARK:AEPO( MARKED 2303GJ-R13 ) - Tape and Reel |
| ITT2303GJ-BLK | 制造商:M/A-COM Technology Solutions 功能描述:2.45GHZ MMIC MARK:AEPO( MARKED 2303GJ-R13 ) - Bulk |
| ITT2-AR | 制造商:FUJITSU Component Ltd 功能描述: 制造商:FUJITSU 功能描述: |
| ITT2B-AH | 制造商:FUJITSU Component Ltd 功能描述: 制造商:FUJITSU 功能描述: |
| ITT2B-AR | 制造商:FUJITSU Component Ltd 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。