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參數(shù)資料
| 型號： | IXDH20N120 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage IGBT with optional Diode |
| 中文描述： | 38 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | IXDH20N120 |
2000 IXYS All rights reserved
1 - 4
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 k
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 90°C, t
p
= 1 ms
38
25
50
A
A
A
RBSOA
V
= ±15 V, T
= 125°C, R
= 82
Clamped inductive load, L = 30 μH
I
CM
= 35
V
CEK
CES
A
t
(SCSOA)
V
GE
= ±15 V, V
= V
, T
J
= 125°C
R
G
= 82 , non repetitive
10
μs
P
C
T
C
= 25°C
IGBT
Diode
200
75
W
W
T
J
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
-55 ... +150
°C
°C
°C
300
M
d
Mounting torque
0.8 - 1.2
Nm
Weight
6
g
V
CES
I
C25
V
CE(sat) typ
= 2.4 V
= 1200 V
= 38 A
Features
G
NPT IGBT technology
G
low saturation voltage
G
low switching losses
G
square RBSOA, no latch up
G
high short circuit capability
G
positive temperature coefficient for
easy paralleling
G
MOS input, voltage controlled
G
optional ultra fast diode
G
International standard package
Advantages
G
Space savings
G
High power density
Typical Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninteruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
IXDH 20N120 D1
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 0.6 mA, V
CE
= V
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25°C
T
J
= 125°C
1 mA
mA
2
I
GES
V
CE
= 0 V, V
GE
= ±
20 V
± 500
nA
V
CE(sat)
I
C
= 20 A, V
GE
= 15 V
2.4
3
V
TO-247 AD
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
G
E
C
C (TAB)
IXDH 20N120 IXDH 20N120 D1
G
C
E
G
C
E
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PDF描述 |
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| IXDP35N60B | IGBT with optional Diode |
| IXDI409YI | 9 Amp Low-Side Ultrafast MOSFET Driver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXDH20N120AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-247AD |
| IXDH20N120D1 | 功能描述:IGBT 晶體管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXDH30N120 | 功能描述:IGBT 晶體管 30 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXDH30N120AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-247AD |
| IXDH30N120D1 | 功能描述:IGBT 晶體管 30 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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