參數(shù)資料
型號(hào)： IXDH35N60BD1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： IGBT with optional Diode
中文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 101K
代理商： IXDH35N60BD1
2000 IXYS All rights reserved
1 - 4
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 k
600
600
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 90°C, t
p
=1 ms
60
35
70
A
A
A
RBSOA
V
= ±15 V, T
= 125°C, R
= 10
Clamped inductive load, L = 30 μH
I
CM
= 110
V
CEK
< V
CES
A
t
(SCSOA)
V
GE
= ±15 V, V
= 600 V, T
J
= 125°C
R
G
= 10 , non repetitive
10
μs
P
C
T
C
= 25°C
IGBT
Diode
250
80
W
W
T
J
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
-55 ... +150
°C
°C
°C
300
M
d
Mounting torque
TO-220
TO-247
0.4 - 0.6
0.8 - 1.2
Nm
Nm
Weight
6
g
V
CES
I
C25
V
CE(sat) typ
= 2.1 V
= 600 V
= 60 A
Features
G
NPT IGBT technology
G
low switching losses
G
low tail current
G
no latch up
G
short circuit capability
G
positive temperature coefficient for
easy paralleling
G
MOS input, voltage controlled
G
optional ultra fast diode
G
International standard package
Advantages
G
Space savings
G
High power density
Typical Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninteruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
600
V
V
GE(th)
I
C
= 0.7 mA, V
CE
= V
GE
3
5
V
I
CES
V
CE
= V
CES
T
J
= 25°C
T
J
= 125°C
0.1 mA
1
mA
I
GES
V
CE
= 0 V, V
GE
= ±
20 V
± 500
nA
V
CE(sat)
I
C
= 35 A, V
GE
= 15 V
2.2
2.7
V
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
G
C
E
G
C
E
TO-247 AD
IXDH ...
G
E
C
C (TAB)
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
TO-220 AB
IXDP ...
C (TAB)
G
C
E
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