參數(shù)資料
型號： IXFC80N10
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFETTM MOSFET ISOPLUS220
中文描述： 80 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS220, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 70K
代理商： IXFC80N10
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
100
100
V
V
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
Lead current imit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
80
55
320
A
A
A
80
A
50
2.5
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
F
C
V
ISOL
230
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting force
11..65/2.4..11 Nm/lb
50/60 Hz, RMS,
leads-to-tab
2500
V~
Weight
2
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 4 mA
100
V
2.0
4.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= I
T
Notes 1, 2
12.5 m
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
G = Gate,
S = Source
D = Drain,
* Patent pending
HiPerFET
TM
MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
IXFC 80N10
V
DSS
I
D25
R
DS(on)
= 12.5 m
t
rr
≤
200 ns
= 100 V
= 80 A
98852 (8/01)
G
D
S
ADVANCE TECHNICAL INFORMATION
ISOPLUS 220
TM
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical solation
Low drain to tab capacitance(<35pF)
Low R
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
Isolated back surface*
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