參數(shù)資料
型號(hào)： IXFP3N120
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 573K
代理商： IXFP3N120
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 3N120
IXFP 3N120
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
1.5
2.5
S
C
iss
C
oss
C
rss
1050
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
100
pF
25
pF
t
d(on)
t
r
t
d(off)
t
f
17
ns
V
GS
R
G
= 4.7
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
ns
32
ns
18
ns
Q
g(on)
Q
gs
Q
gd
39
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
9
nC
22
nC
R
thJC
R
thCK
0.62
K/W
(TO-220)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive; pulse width limited by T
JM
12
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
300
ns
μ
C
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
0.4
1.2
A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-220 (IXFP) Outline
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
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參數(shù)描述
IXFP3N50PM 功能描述:MOSFET 2.7 Amps 500V 2.0 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFP3N80 功能描述:MOSFET 3.6 Amps 800V 3.6 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFP4N100P 功能描述:MOSFET 4 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFP4N100PM 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Polar HiperFET Power MOSFET
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