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參數(shù)資料
| 型號(hào)： | IXGH28N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 57K |
| 代理商： | IXGH28N60BD1 |
1 - 2
2000 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
40
28
80
A
A
A
I
= 56
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque (M3) TO-247
1.13/10
300
Nm/lb.in.
C
Weight
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
V
Low V
CE(sat)
IGBT with Diode
V
CES
I
C25
V
CE(sat)
=
=
=
600 V
40 A
2.0 V
Features
International standard packages
IGBT and anti-parallel FRED in one
package
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
98567A (7/00)
Preliminary data
TO-247 AD
(IXGH)
TO-268
(IXGT)
IXGH 28N60BD1
IXGT 28N60BD1
IXYS reserves the right to change limits, test conditions, and dimensions.
G
C (TAB)
E
G
C
E
TAB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGT28N60BD1 | Low VCE(sat) IGBT with Diode |
| IXGH28N60B | Ultra Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為2.0V的絕緣柵雙極晶體管(帶二極管）) |
| IXGH28N90 | HIPERFAST IGBT |
| IXGH28N90B | HIPERFAST IGBT |
| IXGT28N90B | HIPERFAST IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH28N90 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFAST IGBT |
| IXGH28N90B | 功能描述:IGBT 晶體管 51 Amps 900V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH2N250 | 制造商:IXYS Corporation 功能描述:IGBT 2500V 5.5A 32W TO247 |
| IXGH30B60BD1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFASTTM IGBT with Diode |
| IXGH30N120B3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 1200V IGBTs |
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