參數(shù)資料
型號(hào)： IXGH30B60BD1
廠商： IXYS Corporation
英文描述： HiPerFASTTM IGBT with Diode
中文描述： HiPerFASTTM與IGBT的二極管
文件頁數(shù)： 2/5頁
文件大?。?/td> 114K
代理商： IXGH30B60BD1
2 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
25
typ.
max.
g
fs
I
Pulse test, t 300 s, duty cycle 2 %
= I
; V
= 10 V,
S
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
2700
240
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50
110
22
40
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
30
ns
ns
ns
ns
mJ
130
100
1.0
220
190
2.0
25
35
1.0
200
230
ns
ns
mJ
ns
ns
2.5
mJ
R
thJC
R
thCK
0.62 K/W
(TO-247 AD)
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
F
= I
, V
= 0 V, Pulse test
t
300 s, duty cycle d 2 %
T
J
= 150 C
1.6
2.5
V
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 100 A/ s
V
R
= 100 V
I
F
= 1 A; -di/dt = 100 A/ s; V
R
= 30 V
6
A
T
J
=100 C
100
25
ns
ns
R
thJC
0.9 K/W
Inductive load, T
J
= 25 C
I
C
= I
, V
GE
= 15 V, L = 100 H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 150 C
I
C
= I
C90
, V
GE
= 15 V, L = 100 H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGH 30N60BD1
IXGT 30N60BD1
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
L2
1.00
1.15
L3 0.25 BSC .010 BSC
L4
3.80
4.10
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.039
.752
.106
.055
.045
.150
.161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH30N120B3 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 1200V IGBTs
IXGH30N120B3D1 功能描述:IGBT 晶體管 60 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH30N120BD1 功能描述:MOSFET 50 Amps 1200V 3.5 V Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXGH30N120C3H1 功能描述:IGBT 模塊 High Frequency Range 40khz C-IGBT w/Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
IXGH30N120IH 功能描述:MOSFET 40 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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