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參數(shù)資料
| 型號： | IXGH30N30 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 60 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 75K |
| 代理商： | IXGH30N30 |
2 - 4
2000 IXYS All rights reserved
IXGH 30N30
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t 300 s, duty cycle 2 %
= I
; V
= 10 V,
20
28
S
C
ies
C
oes
C
res
2500
210
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
60
Q
g
Q
ge
Q
gc
145
23
50
170
35
75
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
25
40
ns
ns
ns
ns
mJ
170
180
1.0
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
25
40
0.3
250
300
1.6
ns
ns
mJ
ns
ns
mJ
420
450
2.4
R
thJC
R
thCK
0.62 K/W
0.25
K/W
Inductive load, T
J
= 25°C
I
C
= I
, V
GE
= 15 V, L = 100 H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 1.0
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 100 H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 1.0
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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PDF描述 |
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| IXGH30N60 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH30N60A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH30N60B2 | HiPerFAST IGBT |
| IXGT30N60B2 | HiPerFAST IGBT |
| IXGH30N60BU1 | HiPerFAST IGBT with Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH30N30S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 250V V(BR)CES | 60A I(C) | TO-247SMD |
| IXGH30N50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247 |
| IXGH30N50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247 |
| IXGH30N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High speed IGBT |
| IXGH30N60A | 功能描述:MOSFET 60 Amps 600V 2.6 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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