參數(shù)資料
型號： IXGH32N50BS
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFAST IGBT
中文描述： 60 A, 500 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 2 PIN
文件頁數(shù)： 2/2頁
文件大小： 50K
代理商： IXGH32N50BS
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH32N50B
IXGH32N50BS
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
Inches
Min.
.190
.090
.075
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
Max.
5.21
2.54
2.16
1.40
2.13
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
BSC
Max.
.205
.100
.085
.055
.084
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
.190
BSC
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
P
Q
R
S
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
15
20
S
C
ies
C
oes
C
res
2500
230
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
70
Q
g
Q
ge
Q
gc
125
23
50
150
35
75
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
25
30
ns
ns
ns
ns
mJ
100
80
0.7
200
150
1.5
t
d(on)
t
ri
E
on
t
d(off)
t
fi
25
35
0.3
120
120
ns
ns
mJ
ns
ns
E
off
1.2
mJ
R
thJC
R
thCK
0.62 K/W
0.25
K/W
TO-247 AD Outline
TO-247 SMD Outline
Min. Recommended Footprint
(Dimensions in inches and (mm))
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PDF描述
IXGH32N60AU1 HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.9V的HiPerFAST絕緣柵雙極晶體管(帶二極管）)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH32N50BU1 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N50BU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N60A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AS 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AU1 功能描述:IGBT 晶體管 32 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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