參數(shù)資料
型號： IXGH32N60A
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFAST IGBT
中文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 44K
代理商： IXGH32N60A
IXYS Semiconductor GmbH
Edisonstr. 15,D-68623 Lampertheim
Phone: +49-6206-503-0 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXGH 32N60A
IXGH 32N60AS
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 33
Clamped inductive load, L = 100
μ
H
60
32
120
A
A
A
I
= 64
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
300
°
C
M
d
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-247 SMD
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
600
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.9
V
92793H (3/96)
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 60 A
= 2.9 V
= 125 ns
TO-247 SMD
(32N60AS)
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
GCE
TO-247 AD
G
E
C (TAB)
Features
G
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
G
High current handling capability
G
2nd generation HDMOS
TM
process
G
MOS Gate turn-on
- drive simplicity
Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninterruptible power supplies (UPS)
G
Switched-mode and resonant-mode
power supplies
Advantages
G
Space savings (two devices in one
package)
G
High power density
G
Suitable for surface mounting
G
Switching speed for high frequency
applications
G
Easy to mount with 1 screw,TO-247
(isolated mounting screw hole)
HiPerFAST
TM
IGBT
1995 IXYS Corporation. All rights reserved.
相關(guān)PDF資料
PDF描述
IXGH32N60AS HiPerFAST IGBT
IXGH32N60BD1 Connector Cover; Number of Contacts:1; Color:Red; Contact Termination:Crimp or Solder
IXGT32N60BD1 HiPerFAST IGBTwith Diode
IXGH32N60AU1S HiPerFAST IGBT with Diode Combi Pack
IXGH32N60BU1 HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管（帶二極管）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH32N60AS 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AU1 功能描述:IGBT 晶體管 32 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60AU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N60B 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60B_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
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