參數(shù)資料
型號： IXGH32N50BU1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFAST IGBT with Diode Combi Pack
中文描述： 60 A, 500 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 51K
代理商： IXGH32N50BU1
1997 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 33
Clamped inductive load, L = 100
μ
H
60
32
120
A
A
A
I
= 64
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
300
°
C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
TO-247 SMD
TO-247 AD
4
6
g
g
Preliminary Data Sheet
HiPerFAST
TM
IGBT
with Diode
Combi Pack
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
500 V
60 A
2.0 V
80 ns
IXGH32N50BU1
IXGH32N50BU1S
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
500
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
8
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
V
E
TO-247 SMD
(32N50BU1S)
G
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
G
C
E
TO-247 AD
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High frequency IGBT and antiparallel
FRED in one package
l
High current handling capability
l
Newest generation HDMOS
TM
process
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
High power density
l
Very fast switching speeds for high
frequency applications
95565A (4/97)
相關PDF資料
PDF描述
IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack
IXGH32N50B HiPerFAST IGBT
IXGH32N50BS HiPerFAST IGBT
IXGH32N60AU1 HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.9V的HiPerFAST絕緣柵雙極晶體管(帶二極管）)
IXGH32N60A HiPerFAST IGBT
相關代理商/技術參數(shù)
參數(shù)描述
IXGH32N50BU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N60A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AS 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AU1 功能描述:IGBT 晶體管 32 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60AU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*