參數(shù)資料
型號： IXGH32N50BU1S
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFAST IGBT with Diode Combi Pack
中文描述： 60 A, 500 V, N-CHANNEL IGBT
封裝： TO-247, 2 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 51K
代理商： IXGH32N50BU1S
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH32N50BU1
IXGH32N50BU1S
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
15
typ.
20
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
S
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
2500
270
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
70
125
23
50
150
35
75
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
30
ns
ns
ns
ns
mJ
100
80
0.7
200
150
1.5
25
35
ns
ns
mJ
ns
ns
1
120
120
1.2
mJ
R
thJC
R
thCK
0.62 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
=25
°
C
10
150
35
15
A
T
J
=125
°
C
ns
ns
50
R
thJC
1 K/W
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Min. Recommended Footprint
(Dimensions in inches and (mm))
TO-247 AD Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
Inches
Min.
.190
.090
.075
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
Max.
5.21
2.54
2.16
1.40
2.13
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
BSC
Max.
.205
.100
.085
.055
.084
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
.190
BSC
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
P
Q
R
S
TO-247 SMD Outline
相關(guān)PDF資料
PDF描述
IXGH32N50B HiPerFAST IGBT
IXGH32N50BS HiPerFAST IGBT
IXGH32N60AU1 HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.9V的HiPerFAST絕緣柵雙極晶體管(帶二極管）)
IXGH32N60A HiPerFAST IGBT
IXGH32N60AS HiPerFAST IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH32N60A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AS 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60AU1 功能描述:IGBT 晶體管 32 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60AU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N60B 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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