參數(shù)資料
型號(hào)： IXGH32N60BU1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管（帶二極管）)
中文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 85K
代理商： IXGH32N60BU1
1 - 6
2000 IXYS All rights reserved
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
95567B (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
500
A
8
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 33
Clamped inductive load, L = 100 H
60
32
A
A
A
120
I
= 64
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
200
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
TO-247 AD
6
g
IXGH32N60BU1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 60 A
= 2.5V
= 80 ns
HiPerFAST
TM
IGBT
with Diode
Features
International standard package
JEDEC TO-247 AD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXGH32N60B HiPerFAST IGBT
IXGH32N60C HiPerFAST IGBT Lightspeed Series
IXGH35N120B HiPerFAST IGBT(VCES為1200V，VCE(sat)為3.3V的HiPerFAST絕緣柵雙極晶體管)
IXGH35N120 IGBT Lightspeed Series
IXGH35N120C IGBT Lightspeed Series
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH32N60BU1S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD
IXGH32N60C 功能描述:IGBT 晶體管 60 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60CD1 功能描述:IGBT 晶體管 60 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60CS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD
IXGH32N90B2 功能描述:IGBT 晶體管 32 Amps 900V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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