參數(shù)資料
型號： IXGH32N60AU1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.9V的HiPerFAST絕緣柵雙極晶體管(帶二極管）)
中文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 2/2頁
文件大小： 44K
代理商： IXGH32N60AU1
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
IXGH 32N60AU1
IXGH 32N60AU1S
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
Inches
Min.
.190
.090
.075
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
Max.
5.21
2.54
2.16
1.40
2.13
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
BSC
Max.
.205
.100
.085
.055
.084
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
.190
BSC
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
P
Q
R
S
e
P
Min. Recommended Footprint
(Dimensions in inches and mm)
TO-247 SMD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
15
typ.
20
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
S
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
2500
270
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
70
125
23
50
150
35
75
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
30
ns
ns
ns
ns
mJ
120
125
1.8
200
175
25
35
ns
ns
mJ
ns
ns
mJ
1
140
260
4
R
thJC
R
thCK
0.62 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
10
15
A
T
J
= 125
°
C
150
35
ns
ns
50
R
thJC
1 K/W
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXGH32N60A HiPerFAST IGBT
IXGH32N60AS HiPerFAST IGBT
IXGH32N60BD1 Connector Cover; Number of Contacts:1; Color:Red; Contact Termination:Crimp or Solder
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IXGH32N60AU1S HiPerFAST IGBT with Diode Combi Pack
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH32N60AU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N60B 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60B_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60BD1 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60BS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD
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