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參數(shù)資料
| 型號(hào)： | IXGH38N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra-Low VCE(sat) IGBT with Diode |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | IXGH38N60U1 |
1996 IXYS All rights reserved
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 10
Clamped inductive load, L = 100
μ
H
76
38
152
A
A
A
I
= 76
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
8
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
V
Ultra-Low V
CE(sat)
IGBT with Diode
IXGH 38N60U1
V
CES
I
C25
V
CE(sat)
= 600 V
= 76 A
= 1.8 V
Combi Pack
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
Low V
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
l
High power density
94528B (3/96)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH38N60 | Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的絕緣柵雙極晶體管) |
| IXGH39N60B | HiPerFAST IGBT |
| IXGH39N60BD1 | HiPerFAST IGBT |
| IXGH40N30 | HiPerFAST IGBT |
| IXGH40N30A | HiPerFAST IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH39N60B | 功能描述:IGBT 晶體管 76 Amps 600V 1.8 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH39N60BD1 | 功能描述:IGBT 晶體管 76 Amps 600V 1.8 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH39N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | TO-247SMD |
| IXGH40N120A2 | 功能描述:IGBT 晶體管 SGL IGBT 1200V, 80A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N120B2D1 | 功能描述:IGBT 晶體管 IGBT, Diode 1200V, 75A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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