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參數(shù)資料
| 型號(hào)： | IXGH38N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra-Low VCE(sat) IGBT with Diode |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 46K |
| 代理商： | IXGH38N60U1 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 38N60U1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
15
20
S
C
ies
C
oes
C
res
2500
270
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
70
Q
g
Q
ge
Q
gc
125
23
50
150
35
75
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
30
ns
ns
ns
ns
mJ
150
600
500
1200
700
9
15
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
40
ns
ns
mJ
ns
ns
mJ
160
1
800
1000
15
R
thJC
R
thCK
0.62 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
10
15
A
ns
ns
T
J
=125
°
C
150
35
50
R
thJC
1 K/W
TO-247 AD Outline
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
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|---|---|
| IXGH39N60B | 功能描述:IGBT 晶體管 76 Amps 600V 1.8 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH39N60BD1 | 功能描述:IGBT 晶體管 76 Amps 600V 1.8 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH39N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | TO-247SMD |
| IXGH40N120A2 | 功能描述:IGBT 晶體管 SGL IGBT 1200V, 80A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N120B2D1 | 功能描述:IGBT 晶體管 IGBT, Diode 1200V, 75A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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