參數(shù)資料
型號: IXGT30N60B2
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFAST IGBT
中文描述: 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
封裝: TO-268, 3 PIN
文件頁數(shù): 2/5頁
文件大小: 586K
代理商: IXGT30N60B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 30N60B2
IXGT 30N60B2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
300
μ
s, duty cycle
2 %
= 24 A; V
CE
= 10 V,
18
26
S
C
ies
C
oes
C
res
1500
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
115
pF
40
pF
Q
g
Q
ge
Q
gc
66
nC
I
C
= 24 A, V
GE
= 15 V, V
CE
= 300 V
9
nC
22
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
13
ns
15
ns
110
200
ns
82
150
ns
0.32
0.6
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
13
ns
17
ns
0.22
mJ
200
ns
150
ns
0.9
mJ
R
thJC
R
thCK
0.65 K/W
(TO-247)
0.25
K/W
Inductive load, T
J
= 25
°
C
I
C
= 24 A, V
= 15 V
V
CE
= 400 V, R
G
= 5
Inductive load, T
J
= 125
°
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
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