參數(shù)資料
型號(hào)： IXGT30N60BD1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFASTTM IGBT with Diode
中文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-268AA
封裝： D3PAK-3
文件頁數(shù)： 2/5頁
文件大小： 141K
代理商： IXGT30N60BD1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH 30N60BU1
IXGT 30N60BU1
TO-247 AD Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
e
P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
25
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
S
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
2710
240
50
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
110
22
40
150
35
75
nC
nC
nC
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
25
30
130
100
1.0
ns
ns
ns
ns
mJ
220
190
2.0
25
35
ns
ns
mJ
ns
ns
1
200
230
2.5
mJ
R
thJC
R
thCK
0.62 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V
10
15
A
t
rr
R
thJC
35
50
ns
1 K/W
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 150
°
C
I
C
= I
C110
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AA (D
3
PAK)
Min Recommended Footprint
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.9
2.7
.02
5.1
2.9
.25
.193
.106
.001
.201
.114
.010
b
b
2
C
1.15
1.9
1.45
2.1
.65
.045
.75
.016
.057
.83
.026
.4
D
E
E
1
13.80
15.85
13.3
14.00
16.05
13.6
.543
.624
.524
.551
.632
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
.736
.094
.752
.106
L1
1.20
1.40
.047
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGT30N60BU1 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode
IXGT30N60C2 功能描述:IGBT 晶體管 30 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGT30N60C2D1 功能描述:IGBT 晶體管 30 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGT30N60C3D1 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 600V IGBT with Diode
IXGT31N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Ultra-Low VCE(sat) IGBT
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