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參數(shù)資料
| 型號(hào)： | IXGT60N60B2 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 581K |
| 代理商： | IXGT60N60B2 |
IXGH 60N60B2
IXGT 60N60B2
Inductive load, T
J
= 25
°
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 3.3
Note 1
Inductive load, T
J
= 125
°
C
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 3.3
Note 1
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ. Max.
g
fs
I
Note 1
= 50 A; V
CE
= 10 V,
40
58
S
C
ies
C
oes
C
res
3900
290
100
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
170
25
57
nC
nC
nC
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
28
30
ns
ns
ns
ns
mJ
160
100
1.0
270
170
2.5
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
28
36
0.6
310
240
2.8
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.25 K/W
0.15
K/W
Notes:
1. Pulse test, t < 300
μ
s wide, duty cycle < 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
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