參數(shù)資料
型號： IXKN45N80C
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： CoolMOS Power MOSFET
中文描述： 44 A, 800 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/2頁
文件大?。?/td> 59K
代理商： IXKN45N80C
2001 IXYS All rights reserved
1 - 2
V
DSS
I
D25
R
DS(on)
74 m
800 V
44 A
CoolMOS
Power MOSFET
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
IXKN 45N80C
Features
●
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- International standard package SOT-227
- Easy screw assembly
●
fast CoolMOS power MOSFET - 3
rd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
●
Enhanced total power density
Applications
●
Switched mode power supplies (SMPS)
●
Uninterruptible power supplies (UPS)
●
Power factor correction (PFC)
●
Welding
●
Inductive heating
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
G
S
D
S
miniBLOC, SOT-227 B
E72873
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
800
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
44
30
A
A
dv/dt
V
DS
< V
; I
F
≤
17 A;
di
F
/dt
≤
100 A/μs
T
VJ
= 150°C
6
V/ns
E
AS
E
AR
I
D
= 4 A; L = 80 mH; T
C
= 25°C
I
D
= 17 A; L = 3 μH; T
C
= 25°C
670
0.5
mJ
mJ
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
63
74 m
V
GSth
V
DS
= 20 V;
I
D
= 4 mA;
2
4
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
50
μA
μA
20
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
400
nA
Q
g
Q
gs
Q
gd
332
36
168
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
25
15
75
10
ns
ns
ns
ns
V
F
(reverse conduction) I
F
= 37.5 A;
V
GS
= 0 V
1.0
1.2
V
R
thJC
0.33 K/W
V
GS
= 10 V; V
DS
= 640 V; I
D
= 70 A
V
= 10 V; V
= 640 V;
I
D
= 70 A; R
G
= 1.8
1
Advanced Technical Information
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