參數(shù)資料
型號(hào)： IXKR40N60
廠商： IXYS CORP
元件分類： JFETs
英文描述： CoolMOS Power MOSFET in ISOPLUS247 Package
中文描述： 40 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 46K
代理商： IXKR40N60
2001 IXYS All rights reserved
1 - 2
V
DSS
I
D25
R
DS(on)
70 m
600 V
38 A
CoolMOS
Power MOSFET
in ISOPLUS247
TM
Package
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
Package with Electrically Isolated Base
IXKR 40N60C
Features
G
ISOPLUS247 package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- JEDEC TO247AD compatible
- Easy clip assembly
G
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
G
Enhanced total power density
Applications
G
Switched mode power supplies (SMPS)
G
Uninterruptible power supplies (UPS)
G
Power factor correction (PFC)
G
Welding
G
Inductive heating
Isolated base*
ISOPLUS 247
TM
E153432
G
D
G = Gate D = Drain S = Source
* Patent pending
CoolMOS is a trademark of
Infineon Technologies AG.
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
600
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
38
25
A
A
dv/dt
V
DS
< V
; I
F
≤
50A;
di
F
/dt
≤
200A/μs
T
VJ
= 150°C
6
V/ns
E
AS
E
AR
I
D
= 10 A; L = 36 mH; T
C
= 25°C
I
D
= 20 A; L = 5 μH; T
C
= 25°C
1.8
J
1
mJ
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
70 m
V
GSth
V
DS
= 20 V;
I
D
= 3 mA;
3.5
5.5
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
25
μA
μA
60
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
100
nA
Q
g
Q
gs
Q
gd
220
55
125
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
30
95
100
10
ns
ns
ns
ns
V
F
(reverse conduction) I
F
= 20 A;
V
GS
= 0 V
0.9
1.1
V
R
thJC
0.45 K/W
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
V
= 10 V; V
= 380 V;
I
D
= 25 A; R
G
= 1.8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXKR40N60C 功能描述:MOSFET 40 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKR47N60C5 功能描述:MOSFET 47 Amps 600V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKT70N60C5 功能描述:MOSFET 70 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKT70N60C5-TRL 制造商:IXYS Corporation 功能描述:70 Amps 600V
IXKU5-505MINIPACK2 功能描述:MOSFET MiniPack 2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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